The lattice structure of ABA tri-layer graphene is shown in the left figure.
It contains six sublattices in its unit cell,
A1,B1,A2,B2,A3,B3
where A and B refer to the sublattice index while the Arabic number 1,2,3 represent the layer index.
In order to give a precise description of its band structure, the interlayer hopping and intralayer hopping between different sublattice sites need to be considered. Fortunately, it’s enough for most cases to take into account only several of them, which are listed in the table.
hopping direction
An⇆Bn
B1⇆A2⇆B3
A1⇆A2⇆A3
A1⇆B2⇆A3
A1⇆A3
B1⇆B3
nominal symbol
γ0
γ1
γ4
γ3
2γ2
2γ5
Besides these hopping parameters, the onsite potential also plays an important role in its electronic structure. The onsite potentials on A1,B1,A2,B2,A3,B3 are
where Δ1 is the potential difference between the nearest layers which can be controlled by a perpendicular displacement field D through Δ1=αdD , where α accounts for the imperfect screening.
Δ2 is the difference between the potential of the central layer and the averaged potential of outer layers, implying the charge density imblance between the inner and outer layers. It can be expressed as Δ2=−6εr4πe2dn2.
and δ is the dimer site potential.
Therefore, the tight-binding Hamiltonian of ABA TLG in the sublattice basis can be written as
Because of its mirror symmetry(∣A1>⟷∣A3>,∣B1>⟷∣B3>) in the absence of D, the Hamiltonian can be reduced into two blocks, each of which holds a irreducible representation of mirror symmetry, although itself reducible.
In the continuum limit, the Hamiltonian can be expanded around the two Dirac points K+ and K−. It makes sense to treat K± as a discrete degree of freedom with binary values, called “valley”, which is similar to the spin.
Introduce two operators : π≡px+ipy=ℏ(kx+iky),π†≡px−ipy
Under a perpendicular magnetic field, px,py should be replaced by px+eAx,py+eAy (e < 0), then π†/π act like creation / annihilation operator, which can be useful in the calculation of Landau level spectra :
π†ψn=ilBℏ2(n+1)ψn+1πψn=−ilBℏ2nψn−1
Introduce other symbols : vi=23ℏaγi for i=0,3,4
Although the continuum model describes the low energy regime around charge neutrality point very well, it is still a six-band model. In order to capture the essential of low-energy physics, the Hb± can be reduced to a 2×2 low-energy effective Hamiltonian :
The typical values of parameters (in the unit of eV) :
γ0
γ1
γ2
γ3
γ4
γ5
δ
Δ2
α
3.16
0.39
-0.028
0.315
0.12
0.018
0.0355
0.0035
0.3
(α describes the imperfect screening effect)
Brief Review of ABA TLG
Here are some papers on ABA TLG
Band Structure
1 : Landau level crossing points in ABA TLG at D=0V/nm can be reflected in the longitudinal magneto-resistance, and they can be used to determine the SWMC parameters.
2 : Δ2 is an important parameter in the low-energy physics of ABA TLG
9 : this theoretical paper tells me that Δ1=edD+2εr4πe2d(n1−n3)(screened by outer layers) and Δ2=−6εr4πe2dn2(caused by nonzero charge density on the middle layer), and how to tell whether the disorder strengthen is strong or not (by scanning D at B=0T to see how sharp the peak at D=0V/nm is).
3 : hBN substrate can have influence on γ2,Δ2, the picture is that with substrate, charges from TLG would move towards hBN, which makes the wave functions of the top and bottom layers of TLG shift away from each other and increases the effective distance between them. Therefore, γ2 is suppressed while Δ2 is enhanced.
4 : ABA TLG at charge neutrality and D=0V/nm is a semimetal with zero bandgap, but under very high pressure (up to 60GPa), the bandgap can be several eV. To get the gap size, the author uses the following equation
(the first two terms describe the Arrhenius-like thermally activated conduction process, and the third term describes a Mott variable-range hopping process) to fit the R-T curves.
5 : This theoretical paper tells me that the screening coefficient α≈0.3 at not very strong D, through first principle calculation.
NOTE
Q : Why Δ1=edD+2εr4πe2d(n1−n3) and Δ2=−6εr4πe2dn2 ?
The density on each layer is n1,n2,n3. In the absence of D, the mirror symmetry requires n1≡n3. As a result, the electric field from these two layers cancel each other, so only the electric field from middle layer should be considered. However, in the presence of non-zero D, n1 doesn’t need to be equal with n3, there is a charge imbalance which leads to another net internal electric field ∝(n1−n3).
Symmetry Breaking
6 : This theoretical paper discusses the strong-magnetic-field physics of duodectet subspace of N=0 Landau level in ABC TLG and ABA TLG, using the Hartree-Fock simulation. A Hund’s rules of LL filling order is predicted in ABA TLG.
7 : At low magnetic field, single particle Quantum Hall picture works well while at higher magnetic field, complete filling of the degeneracy of Lowest Landau Levels (LLL) appears, indicating the physics of quantum hall ferromagnetism. The D−n measurement at fixed B also suggests the importance of Coulomb interaction at higher B.
8 : Quantum Hall Ferromagnetism at finite B, and Fractional QH phases at D=0V/nm which disappears at non-zero D.
10 : Quantum Hall Ferromagnetism at finite B and hysteresis behavior in longitudinal resistance.
11 : At low magnetic field B=1.5T, a symmetry-breaking state at ν=1 emerges which mainly concentrate in one gully, breaking the C3 symmetry. (penetration field capacitance measurement Cp=2c+∂μ∂nc2)
Edge State
12 : At low magnetic field B≈0.5T, a helical edge state, named “quantum parity hall state” emerges at D=0V/nm and ν=0. The phase diagram at ν=0 as a function of D,B⊥,B∥ is also discussed.
Above introduce the single-particle simulation of tri-layer ABA graphene, if you are interested in the Hartree Fock simulation of it, please click the link to the page.